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1

Growth mechanisms of GaN quantum dots and their optical properties

Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Hideki Hirayama, Yoshinobu Aoyagi

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1998

Language:

english

File:

PDF, 2.27 MB

english, 1998

2

Size-dependent optical nonlinearities in GaN quantum dots

Philippe Riblet, Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Yoshinobu Aoyagi

Journal:

Solid State Communications

Year:

1999

Language:

english

File:

PDF, 100 KB

english, 1999

3

In situetching for total control over axial and radial nanowire growth

Magnus T. Borgström, Jesper Wallentin, Johanna Trägårdh, Peter Ramvall, Martin Ek, L. Reine Wallenberg, Lars Samuelson, Knut Deppert

Journal:

Year:

2010

Language:

english

File:

PDF, 527 KB

english, 2010

4

Doping-dependent optical gain in GaN

Ramvall, Peter, Aoyagi, Yoshinobu, Kuramata, Akito, Hacke, Peter, Domen, Kay, Horino, Kazuhiko

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 361 KB

english, 2000

5

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, Hideki, Tanaka, Satoru, Ramvall, Peter, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 422 KB

english, 1998

6

Effect of indium doping on the transient optical properties of GaN films

Kumano, Hidekazu, Hoshi, Ken-ichi, Tanaka, Satoru, Suemune, Ikuo, Shen, Xu-Qiang, Riblet, Philippe, Ramvall, Peter, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 368 KB

english, 1999

7

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, Peter, Tanaka, Satoru, Nomura, Shintaro, Riblet, Philippe, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 312 KB

english, 1998

8

A UV Light-Emitting Diode Incorporating GaN Quantum Dots

Tanaka, Satoru, Lee, Jeong-Sik, Ramvall, Peter, Okagawa, Hiroaki

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 357 KB

english, 2003

9

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, Peter, Tanaka, Satoru, Nomura, Shintaro, Riblet, Philippe, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 309 KB

english, 1999

10

Influence of a piezoelectric field on the electron distribution in a double GaN/Al[sub 0.14]Ga[sub 0.86]N heterojunction

Ramvall, Peter, Aoyagi, Yoshinobu, Kuramata, Akito, Hacke, Peter, Horino, Kazuhiko

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 261 KB

english, 1999

11

Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth

Shen, Xu-Qiang, Ramvall, Peter, Riblet, Philippe, Aoyagi, Yoshinobu

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 55 KB

english, 1999

12

GaN quantum dot UV light emitting diode

Lee, Jeong-Sik, Tanaka, Satoru, Ramvall, Peter, Okagawa, Hiroaki

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 700 KB

english, 2003

13

InAs FinFETs with Hfin = 20nm fabricated using a top-down etch process

Oxland, Richard, Li, Xu, Chang, Shang-Wen, Wang, S.-W., Vasen, Tim, Ramvall, Peter, Contreras-Guerrero, Rocio, Rojas-Ramirez, Juan, Holland, Martin, Doornbos, Gerben, Chang, Y.S., Macintyre, Douglas,

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 466 KB

english, 2016

14

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Holland, Martin, van Dal, Mark, Duriez, Blandine, Oxland, Richard, Vellianitis, Georgios, Doornbos, Gerben, Afzalian, Aryan, Chen, Ta-Kun, Hsieh, Chih-Hua, Ramvall, Peter, Vasen, Tim, Yeo, Yee-Chia, P

Journal:

Scientific Reports

Year:

2017

Language:

english

File:

PDF, 1.33 MB

english, 2017

15

Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations

Afzalian, Aryan, Vasen, Tim, Ramvall, Peter, Shen, Tzer-Min, Wu, Jeff, Passlack, Matthias

Journal:

Journal of Physics Condensed Matter

Year:

2018

Language:

english

File:

PDF, 2.02 MB

english, 2018

16

GaN Quantum Dot UV-LED-Fabrication and Optical Characteristics

TANAKA, Satoru, LEE, Jeong-Sik, RAMVALL, Peter, OKAGAWA, Hiroaki

Journal:

The Review of Laser Engineering

Year:

2004

File:

PDF, 325 KB

2004

17

Sn Incorporation in Ultra-Thin InAs Nanowires for Next-Generation Transistors Characterized by Atom Probe Tomography

Giddings, Alexander Devin, Ramvall, Peter, Vasen, Tim, Afzalian, Aryan, Hwang, Ruey-Lian, Yeo, Dr. Yee-Chia, Passlack, Matthias

Journal:

ACS Applied Nano Materials

Year:

2019

Language:

english

File:

PDF, 1.30 MB

english, 2019